Electronic Devices & Circuit | Exam Paper | 2074 [2018] | RE-ELE501 | SEE

DR Gurung

- April 26, 2018

SEE - 2074 (2018)
ELECTRONIC DEVICES AND CIRCUIT
RE-ELE501
Time: 1hr 15 minutes
Full Marks: 40

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Candidates are required to give their answer according to the given instructions.

Group 'A'

Attempt any ten questions. [10x1=10]

1. Define resistance.
2. What is the equivalent capacitance if two capacitors having capacitance
C1 and C2 are connected in parallel?
3. Draw neat circuit diagram of reverse biased p-n junction.
4. Define doping.
5. Write any one application of power diode.
6. Define rectification process.
7. Write full form of BJT.
8. Why is emitter heavily doped?
9. Where is photo sensitive part located at photo transistor?
10. List the types of MOSFET.
11. Draw the symbol of p-channel JFET.
12. Construct the truth table for AND gate.
13. Write the name of universal gates.

Group 'B'

Attempt any five questions. [5x2=10]

14. Write any two properties of inductor.
15. Why silicon is better semiconductor material than germanium?
16. Write the function of BJT in all three region.
17. Explain dark current in photo transistor.
18. Draw the symbol of PUT.
19. Prove the following Boolean Expression.
AB(AB + AB) = 0
20. Realize AND gate using NOR only.

Group 'C'

Attempt any five questions. [5x4=20]

21. Calculate the equivalent inductance of the given circuit.

Calculate The Equivalent Inductance

22. Explain the I-V characteristics of p-n junction diode with necessary figure.
23. Describe Intrinsic and Extrinsic semiconductor.
24. Describe the operation of half wave rectifier with circuit diagram and waveforms.
25. Explain the characteristics of BJT with necessary figure.
26. Describe the working principle of n-channel JFET with necessary figure.

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SEE Electronic Devices And Circuit RE-ELE501 Question 2074-2018

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DR Gurung

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